The Conductance of Single - Electron Charging In Metallic Quantum Dots

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Lamessa Gudata, Arega Wakjira, Abel Saka


We have studied charging effect in a lateral split gate quantum dot defined by metal gates in the two dimensional electron gas of a GaAs structure. The gate structures allows an independent control of conductance’s of the two tunnel barriers separating the quantum dot from the two dimensional leads, and enable us to vary number of m[ that are located in the dot. We have measured coulomb blockade oscillations in the conductance as the function of gate voltage. Figures 1 – 3 are the results of the study. The conductance at high temperature is constant and at low temperature show oscillation both in positive and negative gate voltage. The current is carried by successive discrete charging and discharging of the dot, form single charge tunnelling.

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